Author Affiliations
Abstract
1 School of Microelectronics, Hefei University of Technology, Hefei 230009, China
2 Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China
3 Faculty of Medicine, Faculty of Biochemistry and Molecular Medicine, University of Oulu, 90220 Oulu, Finland
Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices. Herein, we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film. A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105, a decent responsivity of ~343 mA/W, a respectable specific detectivity of ~2.56 × 1012 Jones, and a rapid response time of 4.5/379 μs, under 730 nm light irradiation. The detector also displays an outstanding long-term air stability and operational durability. In addition, thanks to the excellent flexibility, the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests. Furthermore, the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate, suggesting a possible application in the area of flexible and wearable health monitoring.
2D layered material heterostructure flexible photodetector health monitoring 
Journal of Semiconductors
2023, 44(11): 112001
作者单位
摘要
合肥工业大学电子科学与应用物理学院,安徽 合肥 230601
透明导电氧化物由于特殊的光学性能,已经被广泛地运用于光电器件中。在近红外波长范围内,其介电常数实部将从正转变为负。在介电常数近零(ENZ)区域中,光与物质之间将产生强相互作用,由此将有望实现较宽的相位调制。采用基于氧化铟锡(ITO)的金属-氧化物-半导体电容器(MOS)结构,通过施加0~5 V的偏置电压,对界面附近1 nm厚度内的载流子浓度进行调制,实现了在1470 nm处的接近265°的相位调控。在相位调制的基础上,探索了该结构在光束偏转和聚焦方面的实际应用。此外,双栅型MOS结构的设计进一步拓宽了相位覆盖的范围。
超表面 透明导电氧化物 介电常数近零材料 场效应调制 
激光与光电子学进展
2022, 59(4): 0405001
林亚楠 1吴亚东 3程海洋 1陆杨 3,***[ ... ]罗林保 1,*
作者单位
摘要
1 合肥工业大学电子科学与应用物理学院, 安徽 合肥 230601
2 安徽大学电子信息工程学院, 安徽 合肥 230601
3 合肥工业大学化学与化工学院, 安徽 合肥 230601
提出了一种PdSe2纳米线(NWs)薄膜/Si异质结近红外集成光电探测器。采用热辅助硒化预先制备Pd NWs的方法合成大面积PdSe2 NWs,通过组装和转移NWs可制备包含8×8器件单元的集成光电探测器。光电性能测试结果表明,所设计的器件在200~1300 nm宽波段范围内均有明显的光响应,峰值位于810 nm附近。在零偏压下,器件在810 nm处的响应度(R)为166 mA·W -1,当施加-2 V偏压时,R值显著提高至3.24 A·W -1。此外,集成器件呈现出优异的均匀性,64个器件的电流开关比均为60左右。由于良好的性能均匀性,该集成光电探测器可应用于图像传感领域,能可靠地记录近红外光投射的“LASDOP”字母图像,展示了潜在的应用前景。
光电子学 光电探测器 PdSe2纳米线薄膜 近红外光 集成器件 图像传感 
光学学报
2021, 41(21): 2125001
作者单位
摘要
合肥工业大学电子科学与应用物理学院, 安徽 合肥 230009
日盲紫外探测器以其较高的探测灵敏度和较低的背景噪声广泛应用于导弹制导、空间安全通信、臭氧层空洞监测和火焰检测等**和民用领域。氧化镓(Ga2O3)是一种典型的超宽禁带半导体材料,其较大的禁带宽度(4.2~5.3 eV)几乎占据太阳光谱的整个日盲波段,被认为是制备日盲紫外探测器的理想材料。主要介绍了Ga2O3的不同晶体结构和基本特性,并综述了基于多种Ga2O3结构的日盲紫外探测器的研究进展。基于Ga2O3纳米线的器件的最大光响应度R>10 3 A/W,外量子效率能达到10 5%;Ga2O3单晶器件的光响应度高达10 3~10 5 A/W,外量子效率超过10 6%,响应速度较快(μs级)。Ga2O3基异质结、p-n结和肖特基结的日盲探测器表现出的自驱动特性使其在无需外加电源条件下就能正常工作,这在特殊环境下具有较大的应用潜力。
光电探测器 氧化镓 超宽禁带半导体 日盲紫外 光响应 
中国激光
2021, 48(11): 1100001
作者单位
摘要
合肥工业大学电子科学与应用物理学院,安徽 合肥 230601
提出一种基于多层PtSe2/TiO2纳米棒(NR)阵列的肖特基结紫外光电探测器。多层PtSe2薄膜和TiO2 NRs分别由化学气相沉积法和水热法制备,通过湿转移法,即可获得具有上下结构的多层PtSe2/TiO2 NRs肖特基结器件。光电测试结果表明,所设计的器件对波长为365 nm的紫外光具有较明显的响应,开关比高达5.5×10 4,响应度和比探测率分别可达57 mA/W和8.36×10 11 Jones。此外,器件在空气环境中非常稳定,在空气中放置5周后,光电流基本没有下降。最后,对单个器件的图像传感特性进行研究,结果表明,PtSe2/TiO2探测器可用作图像传感器,能对简单的紫外图形进行成像。
光电子学 紫外光电探测器 TiO2纳米棒阵列 PtSe2薄膜 图像传感器 
光学学报
2020, 40(20): 2025001
Author Affiliations
Abstract
1 School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
2 School of Computer and Information, Hefei University of Technology, Hefei 230009, China
We systematically investigated the tunable dynamic characteristics of a broadband surface plasmon polariton (SPP) wave on a silicon-graded grating structure in the range of 10–40 THz with the aid of single-layer graphene. The theoretical and numerical simulated results demonstrate that the SPPs at different frequencies within a broadband range can be trapped at different positions on the graphene surface, which can be used as a broadband spectrometer and optical switch. Meanwhile, the group velocity of the SPPs can be modulated to be several hundred times smaller than light velocity in vacuum. Based on the theoretical analyses, we have predicted the trapping positions and corresponding group velocities of the SPP waves with different frequencies. By appropriately tuning the gate voltages, the trapped SPP waves can be released to propagate along the surface of graphene or out of the graded grating zone. Thus, we have also investigated the switching characteristics of the slow light system, where the optical switching can be controlled as an “off” or “on” mode by actively adjusting the gate voltage. The slow light system offers advantages, including broadband operation, ultracompact footprint, and tunable ability simultaneously, which holds great promise for applications in optical switches.
(050.2770) Gratings (200.6715) Switching (230.7370) Waveguides (240.6680) Surface plasmons. 
Photonics Research
2017, 5(6): 06000604

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